Characteristics of a High Current Microwave Ion Source for Oxygen Ion Implanter.
نویسندگان
چکیده
منابع مشابه
High-current Oxygen Ion Implanter for SIMOX
OVERVIEW: SOI (silicon on insulator) technology* has attracted a lot of attention as a promising breakthrough technology for high-speed, low-power LSIs. Research and development aimed at its practical use are now being conducted over a wide range of fields, including circuit design, device, process, and SOI wafer manufacturing. The key to the practical use of SIMOX (separation by implanted oxyg...
متن کاملHigh-current Ion Implanter for 300-mm SIMOX Wafer Production
OVERVIEW: There is an increased demand for the production of nextgeneration super-high-speed and low-power-consumption CMOS (complementary metal-oxide semiconductor) devices using SOI (silicon on insulator). Major global device manufacturers are actively commercializing this product. In SOI technology, a device is fabricated in a silicon layer (SOI layer) formed on a BOX (buried oxide) film. Al...
متن کاملDevelopment of a microwave ion source for ion implantations.
A microwave ion source is expected to have a long lifetime, as it has fewer consumables. Thus, we are in the process of developing a microwave ion source for ion implantation applications. In this paper, we report on a newly developed plasma chamber and the extracted P(+) beam currents. The volume of the plasma chamber is optimized by varying the length of a boron nitride block installed within...
متن کاملMicrowave Ion Source for Low Charge State Ion Production
The Plasma and Ion Source Technology Group at LBNL have developed a microwave ion source. The source consists of a stainless-steel plasma chamber, a permanent-magnet dipole structure and a coaxial microwave feed. Measurements were carried out to characterize the plasma and the ion beam produced in the ion source. These measurements included current density, charge state distribution, gas effici...
متن کاملIon Implanter Cro Safety Considera
The contamination on previous been previously reported with emphasis o investigations done earlier but with some Arsenic in beamlines, target chambers an TLV locally for extended periods during source chambers in situ or on a bench top of several hundred ppb or more. Freshly c and AlP and AlAs in quantities that need changes but that use is not always dictate under a designated, remote work are...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: SHINKU
سال: 1999
ISSN: 0559-8516,1880-9413
DOI: 10.3131/jvsj.42.670